PART |
Description |
Maker |
TC554161AFTI-85L |
256K Word x 16 Bit CMOS Static RAM(256K字x 16 CMOS 静RAM) 256K字16位CMOS静态RAM56K字16位的CMOS静态RAM)的
|
Toshiba, Corp.
|
UPD43257B |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
UPD43257BGU-85LL UPD43257BCZ-85LL UPD43257BCZ-70LL |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 256K位CMOS静态RAM 32K的词8
|
NEC Corp. NEC, Corp.
|
UPD43257BGU-70L-A UPD43257BGU-70LL-A UPD43257BGU-8 |
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
UPD43256B00 UPD43256B-XXL UPD43256B-XXLL UPD43256B |
32K X 8 STANDARD SRAM, 70 ns, PDSO28 32K X 8 STANDARD SRAM, 100 ns, PDSO28 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
M5M5V208FP-10LL-W M5M5V208FP-10L-W M5M5V208FP-12LL |
From old datasheet system Coaxial Cable; Coaxial RG/U Type:8; Impedance:50ohm; Conductor Size AWG:16; No. Strands x Strand Size:19 x 29; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word8位)的CMOS静态RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静RAM 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位(262144 - Word位)的CMOS静态RAM
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power 512Kx8 bit CMOS static RAM, 100ns, low power 524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM PT 16C 16#16 PIN PLUG 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
CDP1821C CDP1821C3 FN2983 CDP1821C_3 CDP1821CD3 CD |
From old datasheet system High-Reliability CMOS 1024-Word x 1-Bit Static RAM 高可靠性的CMOS 1024字1位静态存储器 High-Reliability CMOS 1024-Word x 1-Bit Static RAM 1K X 1 STANDARD SRAM, 255 ns, CDIP16
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
M5M5W816TP-55HI M5M5W816TP-85HI M5M5W816TP-70HI |
Memory>Low Power SRAM (M5M5W816TP-55HI/70HI/85HI) CMOS STATIC RAM 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor RENESAS[Renesas Electronics Corporation]
|
TC55VBM416AFTN55 |
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
|
Toshiba Semiconductor
|